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PD663PS/PD666PS
PD663PS/PD666PS
s Features
1. For 3 beams(6-division photodiodes) 2. With non-reflective layer
6-division photodiodes
s Outline Dimensions
Y 2.2 1.2
(Unit: mm)
Internal connection diagram
8 7 6 5
Detector center
3. Transparent transfer molded package
1
2
3
4
B2 B1
2.0 0.2
A1
s Applications
1. Optical pick-up for CD player
0.5 0.4
12.4
X
4.00.1
X'
A2
5
134 578 26
B3
6 7
Anode Anode Cathode
B4
8
1
2
3
4
1.27
Enlarged Figure of Light Detecting Portion
(Unit: m)
Y
2.50.2 Y'
20 0 A1
453
0.97 1.50.1
0.63
Chip (Light detecting portion)
16
0
X
X'
40
.5
.5
67
10 5.00.1
10
Transparent epoxy resin
67
16
0
40
5
PD663PS
Y'
Y
5
5
250
X
A2
B2 B1 B3 B4
A1
150 30
72.5 72.5
X'
150 72.5 72.5 30
Y'
PD666PS
s Absolute Maximum Ratings
Parameter Reverse voltage Operating temperature Storage temperature Soldering temperature Symbol VR T opr T stg T sol Ratings 30 -25 to +85 -40 to +85 260
(Ta=25C) Unit V C C C
*1
*1 For MAX. 3 seconds at the position of 1.0mm from the resin edge
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device."
0.15
97 .5 B1 B2 B3 5 A2 20 0 97 .5 B4
10
10
PD663PS/PD666PS
s Absolute Maximum Ratings
Parameter
*2 *3
(Ta=25C) Symbol Conditions
*4
PD663PS ISC PD666PS EV=1000 lx
Short circuit current
Reverse voltage
*5
VR Id Ct P fC S
IR=10mA VR =15V VR =15V f=1MHz VR=15V,R L=50 Output: -3dB at 500 kHz =780nm
Dark current Terminal Capacitance Peak sensitivity wavelength Cut-off frequency
Sensitivity
*6 A B A B A,B A B A B A,B A B A,B
MIN. 340 80 400 70 30 0.45
TYP. 490 120 570 100 3 2 840 35 35 0.55
MAX. 640 160 740 130 300 200 0.65
Unit nA nA nA nA V pA pA pF pF nm MHz MHz A/W
*2 Values in each element. Elements other than subject elements shall be measured while the anode and the cathode are short-circuited to each other. *3 Short-circuit currents at two segments on both ends and four segments on the center of the element shall be within 10% of the average.
( *4 Ev:Illuminance by CIE standard light source A(tungsten lamp)
*5 Values in each element. *6 Like signs represent like elements in the light detector.
A B A
PD663PS PD666PS
B B B
A
BB BB
A
Fig.1 Power Dissipation vs. Ambient Temperature
100
Fig.2 Spectral Sensitivity
100 Ta=25C
Power dissipation P (mW)
Relative sensitivity (%)
80
80
60
60
40
40
20
20
0 -25
0
25
50
75
100
0 400
500
600
Ambient temperatuer Ta (C)
700 800 900 1000 1100 Wavelength (nm)
PD663PS/PD666PS
FIG. 3 Dark Current vs. Ambient Temperature
10
-8
Fig.4 Dark Current vs. Reverse Voltage
10
-9
A: Tracking pattern B: Focusing pattern
-9
VR=15V
Ta=25C A: Tracking pattern B: Focusing pattern
10
10
-10
Dark Current Id (A)
10
-10
Dark Current Id (A)
A 10
-11
10
-11
B
A 10
-12
10
-12
B
10
-13 -25
0
25
50
75
100
10
-13
0.01
0.1
1
10
100
Ambient Temperature Ta (C)
Reverse Voltage VR (V)
Fig.5 Terminal Capacitance vs. Reverse Voltage
26 24 22 20 18 16 14 12 10 8 6 4 2 0 0.1 0.2
f=1MHz Ta=25C A: Tracking pattern B: Focusing pattern
Fig.6 Relative Sensitivity vs. Ambient Temperature
110 1000lx A Light source 105
Terminal Capacitance Ct (pF)
A
Relative output (%)
100
95 Output at Ta=25:100% 90
B
0.5
1
2
5
10
20
50
85 -25
0
Reverse Voltage VR (V)
25 50 75 Ambient Temperature Ta (C)
100
Fig.7 Responce Time vs. Load Resistance
10
2
Fig.8 Frequency Response
+2 V=15V RL=50 Ta=25C Input: Laser diode (p=780mm)
VR=10V Ta=25C
1
0
Responce Time tr,tf (s)
10
10
0
responsivity (dB)
4 5
-2
tr' tf 10
-1
-4
-6
10
-2
10
1
10
2
10
3
10
10
-8 0.1
0.5 1
5
10
50 100
Load Resistance RL (k)
frequency f (MHz)

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